Heteroepitaxial growth of GaN on (100) and (111)Si substrates by pulsed laser deposition
碩士 === 國立中興大學 === 材料科學與工程學系所 === 102 === In this study, the fabrication of hexagonal GaN on Si(100) and Si(111) templates via pulsed laser deposition (PLD) was employed in the development of GaN-on-Si technology. During the GaN growth process, the deposition conditions were modified to investigate t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02985481165450241805 |