A Study of Electron Mobility in Silicon-Germanium Alloy
碩士 === 國立中興大學 === 電機工程學系所 === 102 === This paper aims to study the changes of electronic mobility in the inversion layer of Silicon-Germanium alloy. The research topic is divided into three parts. First, the band structure of the Silicon-Germanium alloy is calculated with tight-binding for sp3 orbit...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33785623454943636936 |