Transport and Optoelectronics properties of MoS2 thin film transistors
碩士 === 國立中興大學 === 奈米科學研究所 === 102 === We investigate electrical and optoelectrical properties of a multilayer MoS2 field effect transistor (FET) devices. We use image analysis method, atomic force microscope (AFM), and Raman spectroscopy to identify the thickness and number of layers of the Mo...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34575185711739466706 |