Interfacial reactions and phase equilibria between indium thermal interface material and Cu and Ni substrates

• Main Authors: Yu-hsiangWang, 王郁翔
• Other Authors: Shih-Kang Lin
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/vu8b89

碩士 === 國立成功大學 === 材料科學及工程學系 === 102 === With many advantages, pure indium is usually used as Thermal interfacial materials (TIMs) to applied to minimize the contact thermal resistances. Copper and nickel are commonly used in electronics. As a result, the Cu/In/Ni sandwich structure is an essential component in the heat dissipation system. In this study, three different sandwich-type diffusion couples, namely Cu/In/Cu, Ni/In/Ni, and Cu/In/Ni, were annealed at 280 °C and 360 °C for various lengths of time. The IMCs were then identified with the corresponding phase diagrams. For the asymmetric Cu/In/Ni couples, a porous layer with tiny grains and special rod-like grains Cu11In9 were formed at the Cu/In interface; however, a thin planar Ni3In7 and discontinuous bulky Cu11In9 grains were found at the In/Ni interface. The microstructural evolution and the mechanism of phase transformations are discussed in this paper. Furthermore, a tentative Cu-In-Ni ternary phase diagram is proposed to elucidate the progression of Cu/In/Ni interfacial reactions. In addition, series of ternary Cu-In-Ni alloys were designed, fabricated, and heat-treated at 360 °C. And a new ternary compound was found in the Cu-In-Ni 360 oC isothermal section.