Hot-Carrier-Induced Degradation and Gate Oxide Integrity Issue on HV-P-LDMOSFET
碩士 === 國立成功大學 === 微電子工程研究所 === 102 === In the thesis, hot-carrier-induced degradation and mechanism as well as the gate oxide integrity issue of P-type high voltage lateral diffused metal-oxide –semiconductor (HVLDMOS) transistors with shallow trench isolation (STI) structure were investigated....
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85014635885479669786 |