Simulation and Fabrication of Insulated-Gate-Bipolar-Transistor with surface termination design
碩士 === 國立成功大學 === 電機工程學系 === 102 === Insulation-Gate Bipolar Transistor（IGBT）,which is developed for power devices using medium-power and medium-frequency. It integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications. With the dimension...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/zv4y3y |