| Summary: | 碩士 === 國立成功大學 === 電機工程學系 === 102 === Insulation-Gate Bipolar Transistor（IGBT）,which is developed for power devices using medium-power and medium-frequency. It integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications.
With the dimension of semiconductors scaling down, achieving a desired active performance becomes a challenge. The aim of this study is to keep the device active performance and improve the breakdown voltage by optimizing the Guard-ring.
In this paper, we use T-CAD simulation software (Silvaco) to achieve an Insulated Gate Bipolar Transistor (IGBT) design with high breakdown voltage and current. We change the surface structure to enhance the breakdown voltage. Under the same implant and annealing parameters, these two structures have the same forward characteristic, while the new structure breakdown voltage (1000V) is three times higher than the conventional structure (300V).
If the guard-ring implant parameters are altered, the highest breakdown voltage (1120V) can be achieved with a 〖1X10〗^14 ions/cm^2 implant concentration for the Guard-rings. The distance between the first Guard-ring and the main junction (P-body) is found to be 21um. Finally, we change the P-body implant concentration and layout and found that when the cell region is decreased by 2.3%, the active performance will be reduced by 10%.
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