Simulation and Fabrication of Insulated-Gate-Bipolar-Transistor with surface termination design
碩士 === 國立成功大學 === 電機工程學系 === 102 === Insulation-Gate Bipolar Transistor(IGBT),which is developed for power devices using medium-power and medium-frequency. It integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications. With the dimension...
Main Authors: | Bo-YiLee, 李柏毅 |
---|---|
Other Authors: | Wen-Hsi Lee |
Format: | Others |
Language: | zh-TW |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/zv4y3y |
Similar Items
-
Simulation and Design of Insulated Gate Bipolar Transistor
by: Tzer-Min Shen, et al.
Published: (1995) -
Design, Simulation and Modeling of Insulated Gate Bipolar Transistor
by: Gupta, Kaustubh
Published: (2013) -
Design of Insulating Gate Bipolar Transistor
by: Dong-Han Shen, et al.
Published: (2010) -
The Modeling of Insulated-Gate Bipolar Transistor
by: Tsung-Yi Huang, et al.
Published: (2001) -
Design and Analysis of Insulated Gate Bipolar Transistor
by: Wen-Pin Lin, et al.
Published: (2000)