Epitaxy Growth of high resistivity GaN-based buffer on Silicon (111) substrates
碩士 === 國立交通大學 === 光電系統研究所 === 102 === In recent years, growing GaN on Si has attracted a lot of attention. Due to wide band gap, high electron mobility and thermal conductivity, GaN has high electron breakdown field and high current velocity and high operating temperature. GaN-based devices are able...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42198912548687606984 |