Investigation of Mesh Typed GaN-based Light-Emitting Diodes by using mask-less Laser etching
碩士 === 國立交通大學 === 光電系統研究所 === 102 === In this study, a UV (355 nm) laser source is used to etch patterned sapphire substrates and mesh-type GaN light-emitting diodes (LEDs). The UV laser beam is passed through an expander after shaping into a high NA value (> 0.2). The objective lens (OL) rea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/484ptt |