The Improvement of Electrical Performance of HfO2/Al2O3/IGZO TFTs Using Atmospheric Pressure Plasma Jet with Passivation Layer and Laser Annealing Treatment
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Recently, amorphous indium-gallium-zinc oxide thin film transistors are become attractive for use as driving devices in large scale active matrix organic light emitting diode applications and as switching devices in active matrix liquid crystal displays bec...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/35990459884621542276 |