Unipolar Resistive Switching Characteristics of ZrO2-Based RRAM and its Application
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this thesis, the unipolar resistive switching mechanism and characteristics are investigated in the structure of ZrO2-based resistive random access memory (RRAM) with TaN electrode. There are two parts in the thesis. The first part we focus on th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07573770460836974112 |