Study of RRAM reliability and switching mechanism using time-dependent dielectric breakdown methods
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this thesis, time-dependent dielectric breakdown (TDDB) characteristics of resistive switching random access memory (RRAM) have been thoroughly studied. Several applications have also been demonstrated, such as long-term reliability prediction and unders...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/86962169833683697359 |