Schottky Barrier Height of the NiGe/n-type Ge Contact with Dopant Segregation: A First-principles Study
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Recently, traditional Si-based MOSFETs are approaching its fundamental scaling limits, and then Ge has been comprehensively explored as a potential channel material to replace Si due to its high intrinsic carrier mobility for further performance enhancement...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/b5b6tj |