Investigation and Analysis of Germanium Gate-all-Around Nanowire MOSFETs and Junctionless Transistors, Logic Circuits and SRAM
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === This thesis investigate and analysis the semiconductor material Germanium (Ge) using Technology Computer Aided Design (TCAD) simulator. It contains two topics and is organized as follows. In the first part, we investigate the impacts of a single trap induce...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25vp79 |