A Study on the 4H-SiC MOSFETs Channel Mobility Degradation Mechanism
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Silicon carbide (SiC) is suitable for fabricating high power semiconductor devices because of its wide bandgap and high thermal conductivity. Unfortunately, low channel mobility occurs on the 4H-SiC MOSFETs due to the high SiO2/SiC interface state density (...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01803534002397652091 |