Orientation Dependent Characteristics of III-V QWMOSFET for Low Power High Frequency Applications
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === According to the ITRS, the scaling of traditional Si semiconductor is near the end, and III-V materials are considered as the best candidate to continue the semiconductor development. Due to their excellent carrier transport, and their special bandgap eng...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57693479448081383843 |