Single-Transistor Multi-bit-per-cell Resistive-switching Memory for Low-cost Embedded Applications
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Resistive-switching random access memory (RRAM) has garnered significant interest for next-generation nonvolatile memory (NVM) applications because of numerous advantages including its simple cell structure, low operational voltage, fast switching speed and...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/50820982161071290003 |