Plasmons Induced Long-Range Coulomb Effects in Nanoscale FETs

博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === For future device design and manufacturing, understanding of carrier transport in nano scale is stringent. Study on effective mobility extracted from a polysilicon gate metal-oxide-semiconductor field-effect-transistor at different temperatures serves as a...

Full description

Bibliographic Details
Main Authors: Chang, Li-Ming, 張立鳴
Other Authors: Chen, Ming-Jer
Format: Others
Language:en_US
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/98944079827930583135