Plasmons Induced Long-Range Coulomb Effects in Nanoscale FETs
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === For future device design and manufacturing, understanding of carrier transport in nano scale is stringent. Study on effective mobility extracted from a polysilicon gate metal-oxide-semiconductor field-effect-transistor at different temperatures serves as a...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2014
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Online Access: | http://ndltd.ncl.edu.tw/handle/98944079827930583135 |