Switching Characteristic of Power with SiO2 Buffer Layer in TiO2 Based Resistive Random-Access Memory
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === With the technology development, non-volatile memory (NVM) plays an important role in our daily life, such as mobile phones, digital cameras and portable device. The flash memory nowadays is considered as the mainstream. The key issue for flash memory is th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q47mv9 |