Switching Characteristic of Power with SiO2 Buffer Layer in TiO2 Based Resistive Random-Access Memory

• Main Authors: Fu, Kuo-Yang, 傅國洋
• Other Authors: Albert.Chin
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/q47mv9

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === With the technology development, non-volatile memory (NVM) plays an important role in our daily life, such as mobile phones, digital cameras and portable device. The flash memory nowadays is considered as the mainstream. The key issue for flash memory is the scaling of the tunneling oxide. After a long-time operation, thin tunneling oxide (<10nm) also cause the charge lost in the floating gate so it leads to sever control and readout hazards. Many advanced non-volatile memories become the next generation memories to solve these issues, such as phase-change memory (PCM) [1], ferroelectric random access memory (FeRAM) [2], magnetic random access memory (MRAM) [3], and resistive random access memory (RRAM) [4]. The resistive random access memory (RRAM) shows a great potential, due to its low operation voltage, high-speed switch, low power, high density integration and simple structure, etc. In this study, using SiO2 as buffer layer in Ni/TiO2/TaN structure can change the characteristic of device . Compared with Ni/TiO2/SiO2/TaN and Ni/SiO2/TiO2/TaN, The property of Ni/SiO2/TiO2/TaN is worse because of interface trapping between SiO2/TaN. Ni/TiO2/SiO2/TaN has better data.. Resistance ratio >224 at 0.5V, a lower set power value 5.7mW (1.9mA at 3V), compared with TiO2 single layer RRAM, good endurance (100cycle), good retention with a small HRS/LRS decay for 104 sec was measured at 85C.,and the device is insensitive to temperature.