Physical Mechanism Analysis of Self-Heating Effect Induced Degradation Behavior of Advanced InGaZnO Thin-Film Transistors for Gate Driver on Array Technology
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Thin film transistors (TFTs) with active layers composed of transparent oxide-based semiconductors, such as ZnO and amorphous InGaZnO (a-IGZO), have attracted much attention recently due to their considerable potential applications in flat, flexible and...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/52747619315404173545 |