Study on the Copper-Based Resistive Random-Access-Memory (RRAM) Devices
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this thesis, five methods to enhance the resistive switching characteristic of metallic conductive types RRAM have been proposed, including pyramid-structured copper active electrodes, oxidized copper active electrodes, Cu-Ti alloy active electrodes, oxi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/538d89 |