Study and Application of Hydrogen Etch on GaN

博士 === 國立交通大學 === 電子物理系所 === 102 === Although it is a well-known effect that hydrogen can increase the decomposition rate of gallium nitride (GaN), most studies focus on the role of it as a carrier gas during epitaxial growth. Studies of hydrogen etch are therefore scarce. Moreover, there is almost...

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Bibliographic Details
Main Authors: Yeh, Yen-Hsien, 葉彥顯
Other Authors: Lee, Wei-I
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/94937549585146648012