The photocurrent suppressed by light-induced excess electrons in GaAsN/GaAs quantum well：Analysis of RC time constant of the equivalent circuit
碩士 === 國立交通大學 === 電子物理系所 === 102 === This study elucidates the carrier redistribution, electric field variation, formation mechanism of interior potential drop, and photocurrent suppression of GaAsN/GaAs quantum well (QW) under illumination. Initially, according to the photoluminescence (PL) and TEM...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q78hdz |