Growth mechanisms of III-nitride epilayers and nanodots by two-heater MOVPE reactor
博士 === 國立交通大學 === 電子物理系所 === 102 === For III-nitride growth, the metal alkyls are generally used as source precursors for group III elements while ammonia (NH3) is used as the source precursor of nitrogen. Growth and parasitic reactions of nitride semiconductor can be characterized into two reaction...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mwk47m |