Growth and characterization of low-dislocation GaN epilayers using SiN interlayer
碩士 === 國立交通大學 === 電子物理系所 === 102 === In this thesis, we use Metalorganic Chemical Vapor Deposition (MOCVD) reactor to growth GaN epilayer. We insert SiN layer before main eplayer, and by varying SiH4 flow rate, we can control SiN coverage condition and the growth mode of GaN on top of it. We then pe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62290883003989933708 |