Study of Extending Carrier Lifetime in ZnTe QD Coupled with ZnCdSe QW Grown by Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 102 === In this work, we demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/43308019831596730136 |