Investigation of ZrO2/Ge Gate Stack Fabricated on Ge-Channel MOSFETs
碩士 === 國立交通大學 === 電信工程研究所 === 102 === In this thesis, firstly ZrO2/Ge MOS capacitors are fabricated. ZrO2 was deposited by atomic layer deposition (ALD) with different conditions such as deposition temperatures and post deposition annealing (PDA) temperatures. We electrically and physically analy...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49444271181366473317 |