GaN Cascode Packaging Design and Energy Conservation Control System Study
碩士 === 國立交通大學 === 機械工程系所 === 102 === Wide band gap power semiconductor is one of the important material for new power electronics device. AlGaN/GaN has many attractive material properties, such as wide band gap, high breakdown voltage, high critical breakdown field, high saturation electric drift ve...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/eaf4vz |