GaN Cascode Packaging Design and Energy Conservation Control System Study

• Main Authors: Ko, Chih-Wei, 柯智偉
• Other Authors: Cheng, Stone
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/eaf4vz

碩士 === 國立交通大學 === 機械工程系所 === 102 === Wide band gap power semiconductor is one of the important material for new power electronics device. AlGaN/GaN has many attractive material properties, such as wide band gap, high breakdown voltage, high critical breakdown field, high saturation electric drift velocity, high peak electron velocity and, high electron saturation velocity. The AlGaN/GaN HEMT devices in this study are operated in depletion mode, so it is a normally-on device. To easily apply depletion mode GaN HEMT in a power drive circuit design, a low voltage silicon MOSFET is in series to drive the GaN HEMT, which is known as cascode structure, this approach provides one of the simplest and fastest way to deliver a normally-off GaN product. This research studies the characteristics and operation principles of cascode GaN HEMT. Evaluations of GaN HEMT performance based on Boost converter under hard-switching and soft-switching conditions are proceeded in the study to evaluate the performance advantages of GaN/SiC power transistors in power conversion applications. Experimental results illustrate that GaN HEMT is superior than silicon MOSFET.