Evaluation of GaN Power Transistor’s Channel Temperature by Using Performance-Related Parameters
碩士 === 國立交通大學 === 機械工程系所 === 102 === AlGaN/GaN power transistors, compared to conventional silicon-based transistors, have characteristics of high electron mobility, high breakdown voltage, suitable for operating at high power and high frequency conductions. Temperature has significant influence on...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60827297084786555965 |