Investigation of GaN-based light-emitting diodes prepared on high aspect ratio patterned sapphire with sputtered AlN nucleation layer
碩士 === 國立交通大學 === 光電科技學程 === 102 === In the study, we prepared pattern sapphire substrate (PSS) and high aspect ratio pattern sapphire substrate (HARPSS) with an aspect ratio of 4 and 8, respectively. The characteristics of GaN-based materials grown on PSS and HARPSS with sputtered AlN nucleation l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/g6574h |