Bottom-gate Poly-Si Thin Film Transistor Nonvolatile Memories with

碩士 === 國立交通大學 === 理學院應用科技學程 === 102 === TFTs of Low-Temperature Polycrystalline Silicon, LTPS have good characteristic by Metal Induced Lateral Crystallization (MILC) technique. It has been purposed due to metal can be used to cause crystallization at controlled locations with low temperature. More...

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Bibliographic Details
Main Authors: Lu, Ray-Chi, 盧瑞琪
Other Authors: Chao, Tien-Sheng
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/42650280971881437023