Research on the surface of silicon epitaxial process of particle pollution reduction

• Main Authors: Ko, Hung-Sheng, 柯泓昇
• Other Authors: 張立
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/20544781842339860986

碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 102 === Among semiconductor fabrication of Si devices, epitaxy is one of the most critical processes. After many years of development of the epitaxial (EPI) process of semiconductors, production conditions gradually stabilized in recent years. Due to the shrinkage of the devices, it still needs to further improvement on the product yield. This study focuses on EPI process particle issue improvement. In this study, improvement in the EPI process focuses mainly on the cleaning of wafer after polishing up to the vapor deposition process to yield crystal growth conditions, the EPI process conditions discussed, and with a maximum product yield loss caused by particle pollution reduction for yield enhancement. This thesis that is on AMAT machines imported HCl gas to purge EPI surface particles, and attainable good product yield enhancement, and makes the product detected in losses lower than environmental background value. BAKE import and HCl gas processing production test, to find the best process conditions, and that is enough to provide process yield enhancing domestic reference countermeasures.