Improvement of Trench Gate MOSFET Gate Oxide Process
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 102 === This paper is mainly investigate TEOS gas at the vertical furnace LPCVD method to grow UMOSFET gate oxide process, and improved to achieve production condition. Can be divided into three main parts: First, research of this TEOS LPCVD process when the pre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99k854 |