Simulation study of InAlAs/InGaAs Pseudomorphic High Electron MobilityTransistors
碩士 === 國立交通大學 === 影像與生醫光電研究所 === 102 === The device characteristics of InAlAs/InGaAs pseudomorphic high mobility transistor is very excellent at high frequency operations. There are already a lot of teams which have done broad research and verify the electrical characteristic of device. In order to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81166711895235120708 |