Fast Programming Metal-Gate Silicon Quantum Dot Nonvolatile Memory
碩士 === 國立交通大學 === 顯示科技研究所 === 102 === In this thesis, the green nanosecond laser spike annealing (GN-LSA) was employed to fabricate the poly-Si channel and source/drain activation of thin film transistor (TFT). The GN-LSA can transfer a-Si into poly-Si with large grain (1000 nm). Moreover, the chemi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22421814697301712218 |