Simulation of InGaN solar cells grown on m-plane sapphire substrate
碩士 === 國立交通大學 === 平面顯示技術碩士學位學程 === 102 === Before 2002 pepole define the bandgap of GaN is 3.4 eV. The bandgap of InN is 1.9 ~ 2.0 eV. After 2002 U.S. Department of Energy's Lawrence Berkeley National Laboratory of Dr.Wladek Walukiewicz. He got different results . The experimental results show...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/38311278758887769492 |