Characterization of Multi-stripes Semi-polar(1-101) GaN/InGaN Light Emitting Diodes

碩士 === 國立中央大學 === 電機工程學系 === 102 === In this thesis, semi-polar (1-101) GaN / InGaN LEDs was fabricated on v-groove Si (001) substrates and processed to devices. Semi-polar (1-101) plane GaN can improve efficiency droop due to the weak reverse polarization field which can be observed by simulation t...

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Bibliographic Details
Main Authors: Po-Chen Lai, 賴柏辰
Other Authors: Jen-Inn Chyi
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/97440341838649650402