Growth and Fabrication of High Breakdown Voltage AlGaN/GaN Metal-Insulator-Semiconductor Field Effect Transistors
碩士 === 國立中央大學 === 電機工程學系 === 102 === This thesis focus on the enhancement of off-state breakdown voltage of AlGaN/GaN Metal-Insulator-Semiconductor Field Effect Transistors (MIS-FETs) by using MOCVD grown different epitaxy structures on Si. With increasing GaN buffer layer up to 4.6 μm thick, the fa...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90361289417894008956 |