Interfacial Electrical Properties of HfO2/Al2O3/GaSb MOS Capacitors Prepared by Atomic Layer Deposition
碩士 === 國立中央大學 === 電機工程學系 === 102 === According to Moor’s law, the density of transistors on a single integrated circuit chip doubles every 18 months. However, the gain in cost and performance is not commensurate with simple dimension scaling anymore because Si-based transistors are approaching their...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/80309392664140147068 |