Crystallographic Defect Elimination of Silicon Nano-Membrane by Amorphousization and Recrystallization
碩士 === 國立中央大學 === 機械工程學系 === 102 === The goal of this research is to use Smart-Cut to produce ultra-thin Silicon-on-Insulator. The thickness of silicon film is less than 100 nm which is due to the energy constrained from ion implantation. In order to make a 100 nm, sacrificial layer technology must...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dq3x54 |