Suppression Effect of Si/SiO2 Bilayer on Out-diffusion of Hydrogen Ions Implanted in Silicon
碩士 === 國立中央大學 === 機械工程學系 === 102 === Application of modern VLSI circuits, SOI substrate has many advantages compared to many conventional silicon substrate.Smart-Cut ® technology can produce high-quality SOI structure.However,the distribution of hydrogen ions implanted in Smart-Cut process has a gre...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/222pcw |