Numerical Study of Impurity Transport during Czochralski Arsenic-doped Silicon Crystal Growth
碩士 === 國立中央大學 === 機械工程學系 === 102 === Nowadays the Czochralski (Cz) technique has become a main method to grow large single silicon crystal. In order to enhance the quality of crystal, the level of oxygen concentration in the ingot as well as its electric properties has to be controlled. The optimal...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53528976148509821912 |