Growth of GaN on Si substrates with ZnO buffer layer
碩士 === 國立中央大學 === 光電科學與工程學系 === 102 === In this research, a thin (60-100 nm) ZnO layer deposited by sputtering is employed as the buffer layer for the epitaxial growth of GaN on (100) Si substrates. The ZnO buffer mitigates the huge lattice mismatch between GaN and Si, and therefore is expected to i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06165208102277961836 |