| Summary: | 碩士 === 國立中央大學 === 照明與顯示科技研究所 === 102 === The aim of this research is the fabrication of silicon heterojunction solar cells by the PVD sputtering process. A bias magnetron sputtering process was used to replace the CVD process to prevent the disadvantages of the environmental pollution and the high fabricated cost. However, there are some problems for the sputtering process, such as: (1) Boron is difficult to be doped into the film; (2) There are microstructures and defects within the film during the deposition. In this study, some research methods were applied, such as: (1) Varied boron-particle area to improve the boron doping problem; (2) A DC bias voltage was applied to reduce defects from effect of ion bombardment in the thin film.
According to the P-type hydrogenated amorphous silicon monolayer analysis, an AMPS-1D simulation was used to calculate the device based on the actual fabrication of the heterojunction solar cell. When the boron-particle area was increased, the effective dopant of the P-layer was also increased. The applied DC bias can reduce the microstructure caused by the ion bombardment, and also increase the effective doped boron into the film.
The results show that a good silicon heterojunction solar cell can be fabricated by using the large amount of boron particle area (110 degrees) and applying a bias voltage . Finally, the efficiency of the solar cell was up to 8.8%.
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