Simulation of Impact Ionization Effect in InSb High Electron Mobility Transistors
碩士 === 國立彰化師範大學 === 電子工程學系 === 102 === InSb has very high electron mobility and thus shows potential in the applications of ultra-low power, ultra-high speed electronic devices. However, the very small bandgap means strong impact ionization, which severely affects device characteristics. The purpose...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hj7y63 |