Two-dimensional electron gas behavior of crack-free AlGaN/GaN HEMT on Si substrate using AlGaN grading layers
碩士 === 國立彰化師範大學 === 電子工程學系 === 102 === We present the study of crack-free AlGaN/GaN HEMTs on Si substrate grown by metalorganic chemical vapor deposition with the presence of two-dimensional electron gas (2DEG). In this study, three AlxGa1-xN /GaN HEMTs on Si with similar structure are analyzed and...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27306993418857263411 |