Growth of ZnO on aluminum-induced crystallization polycrystalline silicon and their related devices studies
碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 102 === In this study, polycrystalline silicon (poly-Si) thin film was prepared on glass substrate by aluminum-induced crystallization (AIC) at low temperature (500 oC); then zinc-oxide (ZnO) thin film was deposited on the AIC-Si substrate (with structure poly-...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/84310833739272697440 |